The SIRM-300 Bulk Microdefect Analyzer is a non-contact, non-destructive, optical instrument, which provides a complete characterization of bulk micro defects (BMDs) such as oxide and metal precipitates, stacking faults, dislocations, slip lines and voids in bulk silicon and in the surface denuded zone (SDZ). GaAs and InP semiconductor materials can also be measured by SIRM-300. Since reflective confocal scanning microscopy is used, the specimen can be a standard, one side polished wafer.

PRODUCT HIGHLIGHTS


• Non-contact, non-destructive analysis
• No sample preparation is needed
• 10 nm minimum detectable particle size
• Measurable defect density: 10⁵-10⁹ cm^-3
• Image collection in X-Y and X-Z planes
• Measurement of epi wafers
• 300 mm measurement capability
• Automatic, edge gripping wafer handling

• Denuded zone determination
• Size distribution
• Detection of BMDs and crystal defects
• Oxygen and metal precipitation
• Stacking fault
• Slip line
• Dislocation
• GaAs investigation